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Fundamental properties of semicomductor materilas
Kahánek, Tomáš ; Jirák, Josef (referee) ; Špinka, Jiří (advisor)
This work deals with fundamental properties of semiconductors materials and methods of their measuring. This work is focused on non-contact methods using light to generate electric charge in semiconductor. Tests were focused on measuring characteristics of PN transition light diods and semiconductor specimen with big resistivity, there was founded absorption edge of silicon.
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Effect of the laser pulse illumination on charge collection efficiency in radiation detectors.
Betušiak, Marián ; Belas, Eduard (advisor)
The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.
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Spectral dependency of the charge generation in semiconductor detectors using nano-second laser pulses
Raja, Marek ; Belas, Eduard (advisor) ; Franc, Jan (referee)
This work deals with the study of charge transport in a semiconductor detector made of CdZnTe material. Theoretical models of charge density distribution are based on a drift-diffusion equation with consideration of infinite and finite lifetime of a charge carrier caused by a shallow and deep trap. The shapes of the measured waveforms with the L-TCT method are fitted by the Monte Carlo method. The obtained values of drift mobility, electric field profile, charge passage time and surface recombination rate are obtained by fitting with the OriginPro program.
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Effect of the laser pulse illumination on charge collection efficiency in radiation detectors.
Betušiak, Marián ; Belas, Eduard (advisor) ; Oswald, Jiří (referee)
The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.
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Effect of the laser pulse illumination on charge collection efficiency in radiation detectors.
Betušiak, Marián ; Belas, Eduard (advisor) ; Oswald, Jiří (referee)
The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.
|
|
|
Spectral dependency of the charge generation in semiconductor detectors using nano-second laser pulses
Raja, Marek ; Belas, Eduard (advisor) ; Franc, Jan (referee)
This work deals with the study of charge transport in a semiconductor detector made of CdZnTe material. Theoretical models of charge density distribution are based on a drift-diffusion equation with consideration of infinite and finite lifetime of a charge carrier caused by a shallow and deep trap. The shapes of the measured waveforms with the L-TCT method are fitted by the Monte Carlo method. The obtained values of drift mobility, electric field profile, charge passage time and surface recombination rate are obtained by fitting with the OriginPro program.
|
|
|
Fundamental properties of semicomductor materilas
Kahánek, Tomáš ; Jirák, Josef (referee) ; Špinka, Jiří (advisor)
This work deals with fundamental properties of semiconductors materials and methods of their measuring. This work is focused on non-contact methods using light to generate electric charge in semiconductor. Tests were focused on measuring characteristics of PN transition light diods and semiconductor specimen with big resistivity, there was founded absorption edge of silicon.
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